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Dual RF LDMOS Bias Controllers
with I 2 C/SPI Interface
ELECTRICAL CHARACTERISTICS (continued)
(GATEV DD = +5.5V for the MAX1385, GATEV DD = +11V for the MAX1386, AV DD = DV DD = +5V, external V REFADC = +2.5V, external V REF-
DAC = +2.5V, C REF = 0.1μF, unless otherwise noted. T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Channel-to-Channel Offset
Matching
Channel-to-Channel Gain
Matching
MONITOR ADC DYNAMIC ACCURACY (1kHz sine-wave input, 2.5V P-P , up to 94.4ksps)
±0.1
±0.1
LSB
LSB
Signal-to-Noise Plus Distortion
SINAD
70
dB
Total Harmonic Distortion
Spurious-Free Dynamic Range
Intermodulation Distortion
Full-Power Bandwidth
Full-Linear Bandwidth
THD
SFDR
IMD
Up to the 5th harmonic
f IN1 = 0.99kHz, f IN2 = 1.02kHz
-3dB point
S/(N + D) > 68dB
-82
86
76
10
100
dB
dB
dB
MHz
kHz
MONITOR ADC CONVERSION RATE
Power-Up Time
t PU
External reference
Internal reference
0.8
70
μs
Conversion Time
t CONV
Internally clocked
7.5
10
μs
MONITOR ADC ANALOG INPUT (ADCIN1, ADCIN2)
Input Range
Input Leakage Current
Input Capacitance
V ADCIN
C ADCIN
Relative to AGND (Note 6)
V IN = 0V and V IN = AV DD
0
±0.01
34
V REF
±1
V
μA
pF
TEMPERATURE MEASUREMENT S
MAX1385A/MAX1386A, T A = +25°C
±0.25
Internal Sensor Measurement
Error (Note 1)
External Sensor Measurement
Error (Notes 1, 7)
MAX1385A/MAX1386A, T A = T MIN to T MAX
MAX1385B/MAX1386B, T A = +25°C
MAX1385B/MAX1386B, T A = T MIN to T MAX
T A = +25°C
T A = T MIN to T MAX
-1.0
-2.0
-3
±0.25
±0.25
±0.35
±0.4
±0.75
+1.0
+2.0
+3
°C
°C
Temperature Resolution
1/8
°C/LSB
External Diode Drive
Drive Current Ratio
(Note 8)
2.8
16.5
85
μA
INTERNAL REFERENCE
REFADC/REFDAC Output Voltage
V REFADC
V REFDAC
T A = +25°C
T A = +25°C
2.494
2.494
2.500
2.500
2.506
2.506
V
REFADC/REFDAC Output
Temperature Coefficient
REFADC/REFDAC Output
Impedance
TC REFADC ,
TC REFDAC
±14
6.5
ppm/°C
k ?
4
_______________________________________________________________________________________
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